 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AOB428 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOB428 is Pb-free (meets ROHS & Sony 259 specifications). AOB428L is a Green Product ordering option. AOB428 and AOB428L are electrically identical. Features VDS (V) = 105V ID = 40 A RDS(ON) < 28 m (VGS =10V) @ 20A RDS(ON) < 31 m (VGS = 6V) TO-263 D2-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C C Maximum 105 25 40 28 100 40 80 100 50 2.5 1.6 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 9 40 1 Max 11 50 1.5 Units C/W C/W C/W Alpha Omega Semiconductor, Ltd. AOB428 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=84V, VGS=0V TJ=55C VDS=0V, VGS=25V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current TJ=125C 2.5 100 22.7 44 25 50 0.73 1 55 2038 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 204 85 1.3 38.5 VGS=10V, VDS=50V, ID=30A 7.7 13.4 12.7 VGS=10V, VDS=50V, RL=2.7, RGEN=3 IF=30A, dI/dt=100A/s 8.2 31.5 11.2 61.6 172.4 74 1.56 46 2445 28 53 31 3.2 Min 105 1 5 100 4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0: Sept2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOB428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 80 60 ID (A) ID(A) 40 5V 20 VGS=4.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 40 Normalized On-Resistance 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=6V,20A VGS=10V, 20A 0 2 2.5 3 3.5 4 4.5 5 10V 6V 25 20 15 10 5 125C 25C VDS=5V VGS(Volts) Figure 2: Transfer Characteristics RDS(ON) (m) 30 VGS=6V 20 VGS=10V 10 0 10 20 30 40 1.0E+02 1.0E+01 50 RDS(ON) (m) 125C ID=20A IS (A) 125C 1.0E+00 1.0E-01 1.0E-02 25C 40 30 1.0E-03 25C 20 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOB428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 10 8 VGS (Volts) 6 4 2 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, TA=25C 100 Power (W) ID (Amps) 10s 10 RDS(ON) limited 1 DC 100s 1ms, DC 200 TJ(Max)=175C TA=25C VDS=50V ID=20A Capacitance (nF) 2 Ciss 1 Coss Crss 0 0 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics 20 100 300 100 0.1 0.1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOB428 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 ID(A), Peak Avalanche Current 150 40 Power Dissipation (W) L ID tA = BV - V DD TA=25C TA=150C 20 100 50 0 0.000001 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 50 40 Current rating ID(A) Power (W) 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 100 80 60 40 20 0 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 100 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10 1 0.1 PD 0.01 Single Pulse Ton T 100 1000 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
Price & Availability of AOB428L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |